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| SEMiX 603GB066HD ... Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMiX(R)3 Trench IGBT Modules SEMiX 603GB066HD SEMiX 603GAL066HD SEMiX 603GAR066HD Target Data Inverse diode Freewheeling diode Features Characteristics Symbol Conditions IGBT min. typ. max. Units Typical Applications Remarks Inverse diode, Freewheeling diode Thermal characteristics Temperature sensor Mechanical data GB GAL GAR 1 01-12-2005 GES (c) by SEMIKRON SEMiX 603GB066HD ... Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 2 01-12-2005 GES (c) by SEMIKRON SEMiX 603GB066HD ... Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Fig. 10 Transient thermal impedance of FWD Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current 3 01-12-2005 GES (c) by SEMIKRON SEMiX 603GB066HD ... Fig. 13 Typ. CAL diode recovered charge This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 01-12-2005 GES (c) by SEMIKRON |
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